Semiconductor device with air gap and boron nitride cap and method for forming the same

ABSTRACT

The present disclosure provides a semiconductor device with an air gap and a boron nitride cap for reducing capacitive coupling in a pattern-dense region and a method for preparing the semiconductor device. The semiconductor device includes a first metal plug and a second metal plug disposed over a pattern-dense region of a semiconductor substrate. The semiconductor device also includes a third metal plug and a fourth metal plug disposed over a pattern-loose region of the semiconductor substrate. The semiconductor device further includes a boron nitride layer disposed over the pattern-dense region and the pattern-loose region of the semiconductor substrate. A first portion of the boron nitride layer between the first metal plug and the second metal plug is separated from the semiconductor substrate by an air gap, and a second portion of the boron nitride layer between the third metal plug and the fourth metal plug is in direct contact with the semiconductor substrate.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device and a methodfor forming the same, and more particularly, to a semiconductor devicewith an air gap and a boron nitride cap for reducing capacitive couplingin a pattern-dense region and a method for forming the same.

DISCUSSION OF THE BACKGROUND

Semiconductor devices are essential for many modern applications. Withthe advancement of electronic technology, semiconductor devices arebecoming smaller in size while providing greater functionality andincluding greater amounts of integrated circuitry. Due to theminiaturized scale of semiconductor devices, various types anddimensions of semiconductor devices providing different functionalitiesare integrated and packaged into a single module. Furthermore, numerousmanufacturing operations are implemented for integration of varioustypes of semiconductor devices.

However, the manufacturing and integration of semiconductor devicesinvolve many complicated steps and operations. Integration insemiconductor devices becomes increasingly complicated. An increase incomplexity of manufacturing and integration of the semiconductor devicemay cause deficiencies, such as increased parasitic capacitance betweenadjacent conductive elements, which results in increased powerconsumption and unwanted resistive-capacitive (RC) delay (i.e., signaldelay), especially in a pattern-dense region. Accordingly, there is acontinuous need to improve the manufacturing process of semiconductordevices so that the problems can be addressed.

This Discussion of the Background section is provided for backgroundinformation only. The statements in this Discussion of the Backgroundare not an admission that the subject matter disclosed in this sectionconstitutes prior art to the present disclosure, and no part of thisDiscussion of the Background section may be used as an admission thatany part of this application, including this Discussion of theBackground section, constitutes prior art to the present disclosure.

SUMMARY

In one embodiment of the present disclosure, a semiconductor device isprovided. The semiconductor device includes a first metal plug and asecond metal plug disposed over a pattern-dense region of asemiconductor substrate. The semiconductor device also includes a thirdmetal plug and a fourth metal plug disposed over a pattern-loose regionof the semiconductor substrate. The semiconductor device furtherincludes a boron nitride layer disposed over the pattern-dense regionand the pattern-loose region of the semiconductor substrate. A firstportion of the boron nitride layer between the first metal plug and thesecond metal plug is separated from the semiconductor substrate by anair gap, and a second portion of the boron nitride layer between thethird metal plug and the fourth metal plug is in direct contact with thesemiconductor substrate.

In an embodiment, the first metal plug is separated from the secondmetal plug by a first distance, the third metal plug is separated fromthe fourth metal plug by a second distance, and the second distance isgreater than the first distance. In an embodiment, the first metal plug,the second metal plug, the third metal plug, and the fourth metal plugare covered by the boron nitride layer, and a top surface of the firstmetal plug is higher than a bottom surface of the first portion of theboron nitride layer. In an embodiment, the semiconductor device furtherincludes a first spacer surrounding the first metal plug, and a secondspacer surrounding the second metal plug, wherein the air gap isenclosed by the first spacer, the second spacer, the first portion ofthe boron nitride layer, and the semiconductor substrate. In anembodiment, the semiconductor device further includes a third spacersurrounding the third metal plug, wherein the third spacer is enclosedby the third metal plug, the boron nitride layer, and the semiconductorsubstrate, and a fourth spacer surrounding the fourth metal plug,wherein the fourth spacer is enclosed by the fourth metal plug, theboron nitride layer, and the semiconductor substrate. In an embodiment,the semiconductor device further includes an energy removable structuredisposed between the first metal plug and the second metal plug, whereina portion of the energy removable structure is between the air gap andthe semiconductor substrate. In an embodiment, the pattern-dense regionis in a memory cell of a memory device, and the pattern-loose region isin a peripheral region outside of the memory cell of the memory device.

In another embodiment of the present disclosure, a semiconductor deviceis provided. The semiconductor device includes a first metal plug and asecond metal plug disposed over a pattern-dense region of asemiconductor substrate. The first metal plug and the second metal plughave an air gap therebetween. The semiconductor device also includes athird metal plug and a fourth metal plug disposed over a pattern-looseregion of the semiconductor substrate. A distance between the firstmetal plug and the second metal plug is less than a distance between thethird metal plug and the fourth metal plug. The semiconductor devicefurther includes a boron nitride layer covering the first metal plug,the second metal plug, the third metal plug, and the fourth metal plug.The boron nitride layer has a first portion between the first metal plugand the second metal plug and a second portion between the third metalplug and the fourth metal plug, and a height of the second portion isgreater than a height of the first portion.

In an embodiment, the height of the second portion is substantially thesame as a height of the third metal plug. In an embodiment, a width ofthe second portion of the boron nitride layer is greater than a width ofthe first portion of the boron nitride layer. In an embodiment, thesemiconductor device further includes a first spacer surrounding thefirst metal plug, a second spacer surrounding the second metal plug, athird spacer surrounding the third metal plug, and a fourth spacersurrounding the fourth metal plug, wherein the air gap is between thefirst spacer and the second spacer. In an embodiment, a contact areabetween the second portion of the boron nitride layer and the thirdspacer is greater than a contact area between the first portion of theboron nitride layer and the first spacer. In an embodiment, thesemiconductor device further includes an energy removable structuredisposed between the first spacer and the second spacer and covered bythe first portion of the boron nitride layer, wherein the air gap isenclosed by the energy removable structure.

In yet another embodiment of the present disclosure, a method forforming a semiconductor device is provided. The method includes forminga first metal plug, a second metal plug, a third metal plug, and afourth metal plug over a semiconductor substrate, wherein the firstmetal plug and the second metal plug are over a pattern-dense region ofthe semiconductor substrate, and the third metal plug and the fourthmetal plug are over a pattern-loose region of the semiconductorsubstrate. The method also includes depositing a boron nitride layerover the first metal plug, the second metal plug, the third metal plug,and the fourth metal plug. A first portion of the boron nitride layerextends between the first metal plug and the second metal plug such thatthe first portion of the boron nitride layer and the semiconductorsubstrate are separated by an air gap while a second portion of theboron nitride layer extends between the third metal plug and the fourthmetal plug such that the second portion of the boron nitride layer is indirect contact with the semiconductor substrate.

In an embodiment, a bottommost width of the second portion of the boronnitride layer is greater than a bottommost width of the first portion ofthe boron nitride layer. In an embodiment, the method further includesforming a first spacer surrounding the first metal plug, a second spacersurrounding the second metal plug, a third spacer surrounding the thirdmetal plug, and a fourth spacer surrounding the fourth metal plug beforethe boron nitride layer is deposited. In an embodiment, the methodfurther includes before the boron nitride layer is deposited, performinga deposition process that selectively deposits an energy removable layerbetween the first spacer and the second spacer in the pattern-denseregion without depositing the energy removable layer between the thirdspacer and the fourth spacer in the pattern-loose region. In anembodiment, the boron nitride layer is formed to cover the energyremovable layer, and the method further includes performing a heattreatment process to remove the energy removable layer, such that theair gap is enclosed by the first spacer, the second spacer, the firstportion of the boron nitride layer, and the semiconductor substrate. Inan embodiment, the boron nitride layer is formed to cover the energyremovable layer, and the method also further includes performing a heattreatment process to transform the energy removable layer into an energyremovable structure, wherein the air gap is enclosed by the energyremovable structure, and the energy removable structure is denser thanthe energy removable layer. In an embodiment, the formation of the firstmetal plug, the second metal plug, the third metal plug, and the fourthmetal plug includes forming a doped oxide layer over the semiconductorsubstrate, etching the doped oxide layer to form a plurality of openingsexposing the semiconductor substrate, forming the first metal plug, thesecond metal plug, the third metal plug, and the fourth metal plug inthe openings, and removing the doped oxide layer before the boronnitride layer is deposited.

Embodiments of a semiconductor device are provided in the disclosure.The semiconductor device includes metal plugs and a boron nitride layerover a pattern-dense region and a pattern-loose region of asemiconductor substrate. The boron nitride layer has a first portionbetween the metal plugs in the pattern-dense region, and a secondportion between the metal plugs in the pattern-loose region. The firstportion of the boron nitride layer is separated from the semiconductorsubstrate by an air gap, and the second portion of the boron nitridelayer is in direct contact with the semiconductor substrate. Therefore,the parasitic capacitance between the metal plugs of the pattern-denseregion may be reduced. As a result, the overall device performance maybe improved.

The foregoing has outlined rather broadly the features and technicaladvantages of the present disclosure in order that the detaileddescription of the disclosure that follows may be better understood.Additional features and advantages of the disclosure will be describedhereinafter, and form the subject of the claims of the disclosure. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures or processes for carrying outthe same purposes of the present disclosure. It should also be realizedby those skilled in the art that such equivalent constructions do notdepart from the spirit and scope of the disclosure as set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a top view illustrating a semiconductor device, in accordancewith some embodiments.

FIG. 2 is a cross-sectional view illustrating the semiconductor devicealong the sectional line I-I′ in FIG. 1, in accordance with someembodiments.

FIG. 3 is a flow diagram illustrating a method of forming asemiconductor device, in accordance with some embodiments.

FIG. 4 is a flow diagram illustrating a method of forming asemiconductor device, in accordance with some other embodiments.

FIG. 5 is a top view illustrating an intermediate stage of forming metalplugs during the formation of the semiconductor device, in accordancewith some embodiments.

FIG. 6 is a cross-sectional view illustrating an intermediate stage offorming metal plugs during the formation of the semiconductor devicealong the sectional line I-I′ in FIG. 5, in accordance with someembodiments.

FIG. 7 is a top view illustrating an intermediate stage of formingspacers during the formation of the semiconductor device, in accordancewith some embodiments.

FIG. 8 is a cross-sectional view illustrating an intermediate stage offorming spacers during the formation of the semiconductor device alongthe sectional line I-I′ in FIG. 7, in accordance with some embodiments.

FIG. 9 is a cross-sectional view illustrating an intermediate stage offorming a doped oxide layer during the formation of the semiconductordevice, in accordance with some other embodiments.

FIG. 10 is a cross-sectional view illustrating an intermediate stage offorming a patterned mask during the formation of the semiconductordevice structure, in accordance with some embodiments.

FIG. 11 is a cross-sectional view illustrating an intermediate stage offorming openings in the doped oxide layer during the formation of thesemiconductor device, in accordance with some embodiments.

FIG. 12 is a cross-sectional view illustrating an intermediate stage offorming metal plugs in the doped oxide layer during the formation of thesemiconductor device, in accordance with some embodiments.

FIG. 13 is a cross-sectional view illustrating an intermediate stage ofremoving the doped oxide layer during the formation of the semiconductordevice, in accordance with some embodiments.

FIG. 14 is a cross-sectional view illustrating an intermediate stage offorming spacers during the formation of the semiconductor device, inaccordance with some embodiments.

FIG. 15 is a cross-sectional view illustrating an intermediate stage offorming a dielectric layer during the formation of the semiconductordevice, in accordance with some embodiments.

FIG. 16 is a cross-sectional view illustrating an intermediate stage offorming an energy removable layer during the formation of thesemiconductor device, in accordance with some embodiments.

FIG. 17 is a cross-sectional view illustrating an intermediate stage offorming a dielectric layer during the formation of the semiconductordevice, in accordance with some embodiments.

FIG. 18 is a cross-sectional view illustrating an intermediate stage ofremoving the energy removable layer during the formation of thesemiconductor device, in accordance with some embodiments.

FIG. 19 is a cross-sectional view illustrating an intermediate stage offorming an energy removable structure during the formation of a modifiedsemiconductor device, in accordance with some embodiments.

FIG. 20 is a partial schematic illustration of an exemplary integratedcircuit, including an array of memory cells in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 is a top view illustrating a semiconductor device 100, and FIG. 2is a cross-sectional view illustrating the semiconductor device 100along the sectional line I-I′ in FIG. 1, in accordance with someembodiments. In some embodiments, the semiconductor device 100 includesa semiconductor substrate 101, conductive features 125 a, 125 b, 127 a,127 b, spacers 135 a, 135 b, 137 a, 137 b, and a dielectric layer suchas a boron nitride (BN) layer 143, as shown in FIGS. 1 and 2 inaccordance with some embodiments. In some embodiments, the conductivefeatures 125 a, 125 b, 127 a, 127 b are conductive wires such asinterconnects or bit lines, configured to electrically connecting twoconductive terminals laterally separated from each other. In someembodiments, the conductive features 125 a, 125 b, 127 a, 127 b aremetal plugs, such as bit line plug or capacitor plug, configured toelectrically connecting two conductive terminals vertically separatedfrom each other. The conductive features 125 a, 125 b, 127 a, 127 b areelaborated in connection with following figures, using the metal plugsas examples.

In some embodiments, isolation structures (not shown) are disposed inthe semiconductor substrate 101, and active areas (not shown) aredefined by the isolation structures in the semiconductor substrate 101.Each of the active areas may include source/drain (S/D) regions. In someembodiments, the semiconductor substrate 101 has a pattern-dense regionA and a pattern-loose region B, the metal plugs 125 a and 127 a aredisposed over the pattern-dense region A, and the metal plugs 125 b and127 b are disposed over the pattern-loose region B. It should be notedthat the distance D1 between the metal plugs 125 a and 127 a is lessthan the distance D2 between the metal plugs 125 b and 127 b. No obviousinterfaces exist between the pattern-dense region A and thepattern-loose region B. The dashed lines shown in FIGS. 1 and 2 are usedto clarify the disclosure.

The spacers 135 a and 137 a are disposed over the pattern-dense regionA, and the spacers 135 b and 137 b are disposed over the pattern-looseregion B. In some embodiments, the metal plug 125 a is surrounded by thespacer 135 a, the metal plug 127 a is surrounded by the spacer 137 a,the metal plug 125 b is surrounded by the spacer 135 b, and the metalplug 127 b is surrounded by the spacer 137 b. The dielectric layer(boron nitride layer) 143 is disposed over the pattern-dense region Aand the pattern-loose region B.

Specifically, the metal plugs 125 a, 125 b, 127 a, 127 b and the spacers135 a, 135 b, 137 a, 137 b over the pattern-dense region A and thepattern-loose region B are covered by the boron nitride layer 143. Insome embodiments, the boron nitride layer 143 has a first portion P1between the metal plugs 125 a and 127 a, and a second portion P2 betweenthe metal plugs 125 b and 127 b. In other words, the first portion P1 ofthe boron nitride layer 143 is over the pattern-dense region A of thesemiconductor substrate 101, and the second portion P2 of the boronnitride layer 143 is over the pattern-loose region B of thesemiconductor substrate 101. In particular, the first portion P1 of theboron nitride layer 143 is between and in direct contact with thespacers 135 a and 137 a, and the second portion P2 of the boron nitridelayer 143 is between and in direct contact with the spacers 135 b and137 b. In some embodiments, the contact area between the first portionP1 of the boron nitride layer 143 and the spacer 135 a (or the spacer137 a) is less than the contact area between the second portion P2 ofthe boron nitride layer 143 and the spacer 135 b (or the spacer 137 b).

It should be noted that the first portion P1 of the boron nitride layer143 is separated from the semiconductor substrate 101 by an air gap Gwhile the second portion P2 of the boron nitride layer 143 is in directcontact with the semiconductor substrate 101. In other words, there isno air gap in the pattern-loose region B. As shown in FIG. 2, the secondportion P2 of the boron nitride layer 143 extends to cover thebottommost parts of the spacers 135 b and 137 b, such that the spacer135 b is enclosed by the metal plug 125 b, the second portion P2 of theboron nitride layer 143, and the semiconductor substrate 101, and thespacer 137 b is enclosed by the metal plug 127 b, the second portion P2of the boron nitride layer 143, and the semiconductor substrate 101. Insome embodiments, the air gap G is between the spacers 135 a and 137 aof the pattern-dense region A, and a top surface TS of the metal plug125 a is higher than a bottom surface BS of the first portion P1 of theboron nitride layer 143 (i.e., the interface between the first portionP1 of the boron nitride layer 143 and the air gap (G).

In some embodiments, the first portion P1 of the boron nitride layer 143has a width W1, the second portion P2 of the boron nitride layer 143 hasa width W2, and the width W2 is greater than the width W1. Moreover, thefirst portion P1 of the boron nitride layer 143 has a height H1, thesecond portion P2 of the boron nitride layer 143 has a height H2, andthe height H2 is greater than the height H1. It should be noted that theheight H2 of the second portion P2 of the boron nitride layer 143 issubstantially the same as the height of the metal plug 125 b or theheight of the metal plug 127 b. Within the context of this disclosure,the word “substantially” means preferably at least 90%, more preferably95%, even more preferably 98%, and most preferably 99%.

Furthermore, bit lines (not shown) and storage nodes (not shown) may beformed over the structure of FIGS. 1 and 2 in the subsequent processes.In some embodiments, the bit lines and the storage nodes areelectrically connected to the S/D regions in the semiconductor substrate101. In some embodiments, the semiconductor device 100 is a dynamicrandom access memory (DRAM).

FIG. 3 is a flow diagram illustrating a method 10 of forming thesemiconductor device 100, and the method 10 includes steps S11, S13,S15-1, S15-2, S15-3, S17, and S19, in accordance with some embodiments.FIG. 4 is a flow diagram illustrating another method 20 of forming thesemiconductor device 100, and the method 20 includes steps S21, S23,S25, S27, S29-1, S29-2, S29-3, S31, and S33, in accordance with someembodiments. The steps S11 to S19 of FIG. 3 and the steps S21 to S33 ofFIG. 4 are elaborated in connection with following figures.

FIGS. 5 and 7 are top views illustrating intermediate stages in theformation of the semiconductor device 100, and FIGS. 6 and 8 arecross-sectional views illustrating intermediate stages in the formationof the semiconductor device 100, in accordance with some embodiments. Itshould be noted that FIGS. 6 and 8 are cross-sectional views along thesectional line I-I′ of FIGS. 5 and 7, respectively.

As shown in FIGS. 5 and 6, the semiconductor substrate 101 is provided.The semiconductor substrate 101 may be a semiconductor wafer such as asilicon wafer. Alternatively or additionally, the semiconductorsubstrate 101 may include elementary semiconductor materials, compoundsemiconductor materials, and/or alloy semiconductor materials. Examplesof the elementary semiconductor materials may include, but are notlimited to, crystal silicon, polycrystalline silicon, amorphous silicon,germanium, and/or diamond. Examples of the compound semiconductormaterials may include, but are not limited to, silicon carbide, galliumarsenic, gallium phosphide, indium phosphide, indium arsenide, and/orindium antimonide. Examples of the alloy semiconductor materials mayinclude, but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, and/or GaInAsP.

In some embodiments, the semiconductor substrate 101 includes anepitaxial layer. For example, the semiconductor substrate 101 has anepitaxial layer overlying a bulk semiconductor. In some embodiments, thesemiconductor substrate 101 is a semiconductor-on-insulator substratewhich may include a substrate, a buried oxide layer over the substrate,and a semiconductor layer over the buried oxide layer, such as asilicon-on-insulator (SOI) substrate, a silicon germanium-on-insulator(SGOI) substrate, or a germanium-on-insulator (GOI) substrate.Semiconductor-on-insulator substrates can be fabricated using separationby implantation of oxygen (SIMOX), wafer bonding, and/or otherapplicable methods.

As mentioned above, the semiconductor substrate 101 has a pattern-denseregion A and a pattern-loose region B, and isolation structures and S/Dregions may be formed in the semiconductor substrate 101. In thesecases, the metal plugs 125 a, 125 b, 127 a, and 127 b are formed overthe S/D regions. In some embodiments, the metal plugs 125 a and 127 aare formed over the pattern-dense region A, and the metal plugs 125 band 127 b are formed over the pattern-loose region B. The respectivestep is illustrated as the step S11 in the method 10 shown in FIG. 3. Itshould be noted that the number of metal plugs over the pattern-denseregion A is not limited to two, and may be more than two. Similarly, thenumber of metal plugs over the pattern-loose region B is not limited totwo, and may be more than two, either.

In some embodiments, the metal plugs 125 a, 125 b, 127 a, and 127 b aremade of copper (Cu), copper alloy, aluminum (Al), aluminum alloy,tungsten (W), tungsten alloy, titanium (Ti), titanium alloy, tantalum(Ta), tantalum alloy, another applicable conductive material, or acombination thereof. In some embodiments, the metal plugs 125 a, 125 b,127 a, and 127 b are formed by electroplating. In some otherembodiments, the metal plugs 125 a, 125 b, 127 a, and 127 b are formedby a chemical vapor deposition (CVD) process, a metal organic CVD(MOCVD) process, a physical vapor deposition (PVD) process, an atomiclayer deposition (ALD) process, a sputtering process, or anotherapplicable process.

Next, as shown in FIGS. 7 and 8, the spacers 135 a, 135 b, 137 a, and137 b are formed surrounding the metal plugs 125 a, 125 b, 127 a, and127 b, in accordance with some embodiments. The respective step isillustrated as the step S13 in the method 10 shown in FIG. 3. In someembodiments, the spacers 135 a, 135 b, 137 a, and 137 b are formed onsidewalls of the metal plugs 125 a, 125 b, 127 a, and 127 b,respectively.

In some embodiments, the spacers 135 a, 135 b, 137 a, and 137 b are madeof silicon oxide, silicon carbide, silicon nitride, silicon oxynitride,another applicable dielectric material, or a combination thereof. Insome embodiments, the formation of the spacers 135 a, 135 b, 137a, and137 b includes conformally depositing a spacer material (not shown) overthe top surfaces and the sidewalls of the metal plugs 125 a, 125 b, 127a, and 127 b and the top surface of the semiconductor substrate 101, andetching the spacer material to form the spacers 135 a, 135 b, 137 a, and137 b on sidewalls of the metal plugs 125 a, 125 b, 127 a, and 127 b.

The deposition process for forming the spacers 135 a, 135 b, 137 a, and137 b may include a CVD process, a PVD process, an ALD process, aspin-coating process, or another applicable process. In addition, theetching process for forming the spacers 135 a, 135 b, 137 a, and 137 bmay be an anisotropic etching process, which removes the same amount ofthe spacer material vertically in all places, leaving the spacers 135 a,135 b, 137 a, and 137 b on the sidewalls of the metal plugs 125 a, 125b, 127 a, and 127 b. In some embodiments, the etching process is a dryetching process.

As a result, an opening 140 a is obtained between the spacers 135 a and137 a, and another opening 140 b is obtained between the spacers 135 band 137 b.

Referring to FIG. 2, after the spacers 135 a, 135 b, 137 a, and 137 bare formed, the boron nitride layer 143 is deposited over the structureof FIGS. 7 and 8, such that the air gap G is formed in the pattern-denseregion A, in accordance with some embodiments. The respective step isillustrated as the step S15-1 in the method 10 shown in FIG. 3. In someembodiments, the boron nitride layer 143 has a hexagonal texturedstructure

In some embodiments, the boron nitride layer 143 is formed, using ALDand/or PEALD techniques. In this exemplary embodiment, the device isplaced in a reaction chamber and is preferably heated to a temperaturebetween 100 degrees Celsius and 500 degrees Celsius at a chamberpressure between 0.5 Torr and 10 Torr. More preferably, the temperatureis between 300 degrees Celsius and 400 degrees Celsius, and the chamberpressure is between 0.5 Torr and 3 Torr.

In some embodiments, a boron precursor gas, such as one or more of borontrichloride (BCl₃), trimethylboron (B(CH₃)₃), diborane (B₂H₆), borontribromide (BBr₃), or a precursor gas diluted with an inert gas such ashelium (He) or argon (Ar), is then pulsed into the chamber where it isallowed to form a monolayer, or less than a monolayer, on the exposedsurfaces of the device (i.e., surfaces of the gate stack, hardmask,semiconductor body, and, if present, the liner layer). In someembodiments, the boron precursor is pulsed for a time period between 2seconds to 30 seconds at a flow rate ranging from 50 standard cubiccentimeters (sccm) per minute to 1,000 sccm per minute. In someembodiments, the flow rate at which the boron precursor is pulsed intothe chamber is between 100 sccm per minute and 500 sccm per minute.

In some embodiments, after the boron precursor is pulsed into thechamber, the chamber is purged with an inert gas, such as nitrogen (N₂),argon (Ar), or helium (He), for an amount of time (e.g., 30 seconds)necessary to remove byproducts and all unreacted species from thechamber.

In some embodiments, a nitrogen-containing reactant gas, such asnitrogen, ammonia (NH₃), or a mixture of nitrogen and hydrogen (H₂), isthen pulsed into the deposition chamber to react with the first layerand form a monolayer of boron-nitrogen. In some embodiments, thenitrogen-containing gas is pulsed into the chamber for a time periodbetween 1 second and 10 seconds at a flow rate between 50 sccm perminute and 1,000 sccm per minute. In some embodiments, the flow rate atwhich the nitrogen-containing gas is pulsed is between 100 sccm perminute and 300 sccm per minute.

In some embodiments, PEALD techniques may also be used when providingthe nitrogen-containing reactant gas to the chamber, whereby theboron-nitrogen bond forming reactions are assisted by dissociating thereactant gases using a plasma. In some embodiments, where PEALD is used,the plasma condition is created at a power between 50 W to 500 W and,more preferably, at a power between 100 W and 200 W.

In some embodiments, after pulsing the nitrogen-containing reactant gas,the chamber is again purged for an appropriate amount of time, and thecycle is repeated until deposition of the boron nitride layer hasoccurred to the desired thickness.

Since the width W2 of the opening 140 b is greater than the width W1 ofthe opening 140 a (see FIG. 8), the opening 140 b is entirely filled bythe boron nitride layer 143 while the opening 140 a is only partiallyfilled by the boron nitride layer 143 due to the loading effect. As aresult, the air gap G is sealed by the first portion P1 of the boronnitride layer 143. In some embodiments, the air gap G is enclosed by thefirst portion P1 of the boron nitride layer 143, the spacers 135 a, 137a, and the semiconductor substrate 101. In addition, the width W2 isalso the width of the second portion P2 of the boron nitride layer 143between the spacers 135 b and 137 b, and the width W1 is also the widthW1 of the first portion P1 of the boron nitride layer 143 between thespacers 135 a and 137 a, as shown in FIG. 2 in accordance with someembodiments.

After the boron nitride layer 143 is deposited, the semiconductor device100 is obtained. By forming the air gap G between the metal plugs 125 aand 127 a (or between the spacers 135 a and 137 a surrounding the metalplugs 125 a and 127 a), the parasitic capacitance between the metalplugs 125 a and 127 a may be reduced, especially in the pattern-denseregion A. As a result, the overall device performance may be improved(e.g., the decreased power consumption and signal delay).

FIGS. 9 to 15 are cross-sectional views illustrating intermediate stagesin the formation of the semiconductor device 100, in accordance withsome embodiments. The forming method shown in FIGS. 9-15 is differentfrom the forming method shown in FIGS. 1, 2, and 5 to 8.

A doped oxide layer 103 is formed over the pattern-dense region A andthe pattern-loose region B of the semiconductor substrate 101, as shownin FIG. 9 in accordance with some embodiments. The respective step isillustrated as the step S21 in the method 20 shown in FIG. 4. In someembodiments, the doped oxide layer 103 is made of silicon oxide, andP-type dopants, such as boron (B), gallium (Ga), or indium (In), orN-type dopants, such as phosphorous (P) or arsenic (As), can beimplanted therein. In some embodiments, the doped oxide layer 103 isformed by a deposition process and is doped in-situ during thedeposition process. In some other embodiments, the doped oxide layer 103is formed by a deposition process and a subsequent ion implantationprocess.

Next, a patterned mask 105 is formed over the doped oxide layer 103, asshown in FIG. 10 in accordance with some embodiments. In someembodiments, the patterned mask 105 has openings 106 a, 106 b, 108 a,and 108 b, and portions of the doped oxide layer 103 are exposed by theopenings 106 a, 106 b, 108 a, and 108 b of the patterned mask 105.

The patterned mask 105 may be formed by a deposition process and apatterning process. The deposition process for forming the patternedmask 105 may be a CVD process, a high-density plasma CVD (HDPCVD)process, a spin-coating process, or another applicable process. Thepatterning process for forming the patterned mask 105 may include aphotolithography process and an etching process. The photolithographyprocess may include photoresist coating (e.g., spin-coating), softbaking, mask aligning, exposure, post-exposure baking, developing thephotoresist, rinsing and drying (e.g., hard baking). The etching processmay include a dry etching process or a wet etching process.

Subsequently, an etching process is performed on the doped oxide layer103 using the patterned mask 105 as a mask, as shown in FIG. 11 inaccordance with some embodiments. After the etching process, openings116 a, 116 b, 118 a, and 118 b are formed in the doped oxide layer 103.In some embodiments, portions of the semiconductor substrate 101 areexposed by the openings 116 a, 116 b, 118 a, and 118 b of the dopedoxide layer 103. In particular, the openings 116 a and 118 a are locatedon the pattern-dense region A of the semiconductor substrate 101, andthe openings 116 b and 118 b are located on the pattern-loose region Bof the semiconductor substrate 101, in accordance with some embodiments.After the openings 116 a, 116 b, 118 a, and 118 b are formed, thepatterned mask 105 may be removed.

Then, metal plugs 125 a, 125 b, 127 a, and 127 b are formed in theopenings 116 a, 116 b, 118 a, and 118 b, as shown in FIG. 12 inaccordance with some embodiments. The respective step is illustrated asthe step S23 in the method 20 shown in FIG. 4. In some embodiments, themetal plugs 125 a and 127 a are formed over the pattern-dense region Aof the semiconductor substrate 101, and the metal plugs 125 b and 127 bare formed over the pattern-loose region B of the semiconductorsubstrate 101.

Some materials used to form the metal plugs 125 a, 125 b, 127 a, and 127b of FIG. 12 are similar to, or the same as, those used to form themetal plugs 125 a, 125 b, 127 a, and 127 b of FIG. 6, and detailsthereof are not repeated herein. In addition, the formation of the metalplugs 125 a, 125 b, 127 a, and 127 b of FIG. 12 may include depositing aconductive material (not shown) in the openings 116 a, 116 b, 118 a, and118 b and over the doped oxide layer 103, and performing a planarizationprocess to remove the excess portions of the conductive material, suchthat the doped oxide layer 103 is exposed. In some embodiments, thepatterned mask 105 (see FIG. 10) is not removed after the openings 116a, 116 b, 118 a, and 118 b are formed, and the conductive layer isdeposited in the openings 116 a, 116 b, 118 a, and 118 b and over thepatterned mask 105. In these cases, the patterned mask 105 may beremoved during the planarization process. The planarization process maybe a chemical mechanical polishing (CMP) process.

After the metal plugs 125 a, 125 b, 127 a, and 127 b are formed, thedoped oxide layer 103 is removed, as shown in FIG. 13 in accordance withsome embodiments. The respective step is illustrated as the step S25 inthe method 20 shown in FIG. 4. In some embodiments, the doped oxidelayer 103 is removed by an ashing process or stripping process. In someother embodiments, an etching process is used to remove the doped oxidelayer 103. The etching process may include a wet etching process, a dryetching process, or a combination thereof.

Next, as shown in FIG. 14, the spacers 135 a, 135 b, 137 a, and 137 bare formed surrounding the metal plugs 125 a, 125 b, 127 a, and 127 b,in accordance with some embodiments. The respective step is illustratedas the step S27 in the method 20 shown in FIG. 4. Some materials andprocesses used to form the spacers 135 a, 135 b, 137 a, and 137 b ofFIG. 14 are similar to, or the same as, those used to form the spacers135 a, 135 b, 137 a, and 137 b of FIG. 8, and details thereof are notrepeated herein.

After the spacers 135 a, 135 b, 137 a, and 137 b are formed, opening 140a between the spacers 135 a and 137 a and opening 140 b between thespacers 135 b and 137 b are obtained. It should be noted that the widthW1 of the opening 140 a in the pattern-dense region A is less than thewidth W2 of the opening 140 b in the pattern-loose region B, inaccordance with some embodiments.

After the spacers 135 a, 135 b, 137 a, and 137 b are formed, the boronnitride layer 143 is deposited over the structure of FIG. 14, such thatthe air gap G is formed in the opening 140 a in the pattern-dense regionA, as shown in FIG. 15 in accordance with some embodiments. Therespective step is illustrated as the step S29-1 in the method 20 shownin FIG. 4. Some materials and processes used to form the boron nitridelayer 143 of FIG. 15 are similar to, or the same as, those used to formthe boron nitride layer 143 of FIG. 2, and details thereof are notrepeated herein.

As mentioned above, the width W2 of the opening 140 b is greater thanthe width W1 of the opening 140 a (see FIG. 14). Therefore, the opening140 b is entirely filled by the boron nitride layer 143 while theopening 140 a is only partially filled by the boron nitride layer 143due to the loading effect. As a result, the air gap G is sealed by thefirst portion P1 of the boron nitride layer 143, and the second portionP2 of the boron nitride layer 143 is in direct contact with thesemiconductor substrate 101.

FIGS. 16 to 18 are cross-sectional views illustrating intermediatestages in the formation of the semiconductor device 100, in accordancewith some embodiments. The forming method shown in FIGS. 16 to 18 isdifferent from the forming method shown in FIGS. 1, 2, and 5 to 8 andthe forming method shown in FIGS. 9 to 15.

After the spacers 135 a, 135 b, 137 a, and 137 b are formed,

Continuing with FIG. 8 or 14, an energy removable layer 151 isselectively deposited between the spacers 135 a and 137 a in thepattern-dense region A, as shown in FIG. 16 in accordance with someembodiments. The respective step is illustrated as the step S15-2 in themethod 10 shown in FIG. 3 and the step S29-2 in the method 20 shown inFIG. 4. It should be noted that the energy removable layer 151 is formedby performing a deposition process that selectively deposits the energyremovable layer 151 between the spacers 135 a and 137 a in thepattern-dense region A without depositing the energy removable layer 151between the spacers 135 b and 137 b in the pattern-loose region B, inaccordance with some embodiments.

In some embodiments, the materials of the energy removable layer 151include a thermal decomposable material. In some other embodiments, thematerials of the energy removable layer 151 include a photonicdecomposable material, an e-beam decomposable material, or anotherapplicable energy decomposable material. Specifically, in someembodiments, the materials of the energy removable layer 151 include abase material and a decomposable porogen material that is substantiallyremoved once being exposed to an energy source (e.g., heat).

In some embodiments, the base material includes hydrogen silsesquioxane(HSQ), methylsilsesquioxane (MSQ), porous polyarylether (PAE), porousSiLK, or porous silicon oxide (SiO₂), and the decomposable porogenmaterial includes a porogen organic compound, which can provide porosityto the space originally occupied by the energy removable layer 151 inthe subsequent processes. In addition, the deposition process forforming the dielectric layer 151 may include a CVD process, a PVDprocess, an ALD process, a spin-coating process, or another applicableprocess. After the energy removable layer 151 is formed, a reducedopening 140 a′ may be obtained over the energy removable layer 151.

Then, the boron nitride layer 143 is formed covering the structure ofFIG. 16, as shown in FIG. 17 in accordance with some embodiments. Therespective step is illustrated as the step S17 in the method 10 shown inFIG. 3 and the step S31 in the method 20 shown in FIG. 4. Some materialsand processes used to form the boron nitride layer 143 of FIG. 17 aresimilar to, or the same as, those used to form the boron nitride layer143 of FIG. 2, and details thereof are not repeated herein. It should benoted that the structure has no air gaps in this stage.

After the boron nitride layer 143 is deposited, a heat treatment processis performed, as shown in FIG. 18 in accordance with some embodiments.In some embodiments, during the heat treatment process, the energyremovable layer 151 is removed, such that the air gap G is formedbetween the spacers 135 a and 137 a in the pattern-dense region A. Therespective step is illustrated as the step S19 in the method 10 shown inFIG. 3 and the step S33 in the method 20 shown in FIG. 4.

More specifically, the heat treatment process is used to remove thedecomposable porogen materials of the energy removable layer 151 togenerate pores, and the pores are filled by air after the decomposableporogen materials are removed, such that the air gap G is obtained, inaccordance with some embodiments. In some other embodiments, the heattreatment process can be replaced by a light treatment process, ane-beam treatment process, a combination thereof, or another applicableenergy treatment process. For example, an ultra-violet (UV) light orlaser light may be used to remove the decomposable porogen materials ofthe energy removable layer 151, such that the air gap G is obtained.

FIG. 19 is a cross-sectional view illustrating an intermediate stage offorming an energy removable structure 151′ during the formation of amodified semiconductor device 100′, in accordance with some embodiments.

Continuing with FIG. 17, a heat treatment process is performed to removea portion of the energy removable layer 151, as shown in FIG. 19 inaccordance with some embodiments. In some embodiments, during the heattreatment process, the energy removable layer 151 is transformed into anenergy removable structure 151′, such that the air gap G is enclosed bythe energy removable structure 151′. The respective step is illustratedas the step S19 in the method 10 shown in FIG. 3 and the step S33 in themethod 20 shown in FIG. 4.

More specifically, in some embodiments, the heat treatment process isused to remove the decomposable porogen materials of the energyremovable layer 151 to generate pores, and the base materials of theenergy removable layer 151 are accumulated at the edges of the energyremovable layer 151. The pores are filled by air after the decomposableporogen materials are removed, such that the air gap G is obtainedinside the remaining portions of the energy removable layer 151 (i.e.,the energy removable structure 151′), in accordance with someembodiments. In some other embodiments, the air gap G is not fullysurrounded by the energy removable structure 151′ due to gravity, and aportion of the energy removable structure 151′ is between the air gap Gand the semiconductor substrate 101. After the energy removablestructure 151′ is formed, the modified semiconductor device 100′ isobtained.

FIG. 20 is a partial schematic illustration of an exemplary integratedcircuit, such as a memory device 1000, including an array of memorycells 30 in accordance with some embodiments. In some embodiments, thememory device 1000 includes a dynamic random access memory (DRAM). Insome embodiments, the memory device 1000 includes a number of memorycells 30 arranged in a grid pattern and including a number of rows andcolumns. The number of memory cells 30 may vary depending on systemrequirements and fabrication technology.

In some embodiments, each of the memory cells 30 includes an accessdevice and a storage device. The access device is configured to providecontrolled access to the storage device. In particular, the accessdevice is a field effect transistor (FET) 31 and the storage device is acapacitor 33, in accordance with some embodiments. In each of the memorycells 30, the FET 31 includes a drain 35, a source 37 and a gate 39. Oneterminal of the capacitor 33 is electrically connected to the source 37of the FET 31, and the other terminal of the capacitor 33 may beelectrically connected to the ground. In addition, in each of the memorycells 30, the gate 39 of the FET 31 is electrically connected to a wordline WL, and the drain 35 of the FET 31 is electrically connected to abit line BL.

The above description mentions the terminal of the FET 31 electricallyconnected to the capacitor 33 is the source 37, and the terminal of theFET 31 electrically connected to the bit line BL is the drain 35.However, during read and write operations, the terminal of the FET 31electrically connected to the capacitor 33 may be the drain, and theterminal of the FET 31 electrically connected to the bit line BL may bethe source. That is, either terminal of the FET 31 could be a source ora drain depending on the manner in which the FET 31 is being controlledby the voltages applied to the source, the drain and the gate.

By controlling the voltage at the gate 39 via the word line WL, avoltage potential may be created across the FET 30 such that theelectrical charge can flow from the drain 35 to the capacitor 33.Therefore, the electrical charge stored in the capacitor 33 may beinterpreted as a binary data value in the memory cell 30. For example, apositive charge above a threshold voltage stored in the capacitor 33 maybe interpreted as binary “1.” If the charge in the capacitor 33 is belowthe threshold value, a binary value of “0” is said to be stored in thememory cell 30.

The bit lines BL are configured to read and write data to and from thememory cells 30. The word lines WL are configured to activate the fieldeffect transistors (FET) 31 to access a particular row of the memorycells 30. Accordingly, the memory device 1000 also includes a peripheryregion which may include an address buffer, a row decoder and a columndecoder. The row decoder and the column decoder selectively access thememory cells 30 in response to address signals that are provided to theaddress buffer during read, write and refresh operations. The addresssignals are typically provided by an external controller such as amicroprocessor or another type of memory controller.

Referring back to FIGS. 2 and 19, the air gap G is formed in thepattern-dense region A of the semiconductor device 100 or 100′, while noair gap is formed in the pattern-loose region B of the semiconductordevice 100 or 100′. The pattern-dense region A may be any of the regionsof the memory cells 30 in the memory device 1000, and the pattern-looseregion B may be any of the regions of the address buffer, the rowdecoder, or the column decoder in the memory device 1000.

Embodiments of the semiconductor devices 100 and 100′ are provided inthe disclosure. The semiconductor devices 100 and 100′ include aplurality of metal plugs 125 a, 125 b, 127 a, 127 b over thepattern-dense region A and the pattern-loose region B of thesemiconductor substrate 101, spacers 135 a, 135 b, 137 a, 137 bsurrounding the metal plugs 125 a, 125 b, 127 a, 127 b, respectively,and the boron nitride layer 143 covering the metal plugs 125 a, 125 b,127 a, 127 b and the spacers 135 a, 135 b, 137 a, 137 b. Particularly,the boron nitride layer 143 has a first portion P1 between the spacers135 a and 137 a in the pattern-dense region A and a second portion P2between the spacers 135 b and 137 b in the pattern-loose region B, thefirst portion P1 of the boron nitride layer 143 is separated from thesemiconductor substrate 101 by an air gap G while the second portion P2of the dielectric layer is in direct contact with the semiconductorsubstrate 101. Therefore, the parasitic capacitance between the metalplugs 125 a and 127 a over the pattern-dense region A may be reduced. Asa result, the overall device performance may be improved (i.e., thedecreased power consumption and resistive-capacitive (RC) delay).

In one embodiment of the present disclosure, a semiconductor device isprovided. The semiconductor device includes a first metal plug and asecond metal plug disposed over a pattern-dense region of asemiconductor substrate. The semiconductor device also includes a thirdmetal plug and a fourth metal plug disposed over a pattern-loose regionof the semiconductor substrate. The semiconductor device furtherincludes a dielectric layer disposed over the pattern-dense region andthe pattern-loose region of the semiconductor substrate. A first portionof the dielectric layer between the first metal plug and the secondmetal plug is separated from the semiconductor substrate by an air gap,and a second portion of the dielectric layer between the third metalplug and the fourth metal plug is in direct contact with thesemiconductor substrate.

In another embodiment of the present disclosure, a semiconductor deviceis provided. The semiconductor device includes a first metal plug and asecond metal plug disposed over a pattern-dense region of asemiconductor substrate. The first metal plug and the second metal plughave an air gap therebetween. The semiconductor device also includes athird metal plug and a fourth metal plug disposed over a pattern-looseregion of the semiconductor substrate. A distance between the firstmetal plug and the second metal plug is less than a distance between thethird metal plug and the fourth metal plug. The semiconductor devicefurther includes a dielectric layer covering the first metal plug, thesecond metal plug, the third metal plug, and the fourth metal plug. Thedielectric layer has a first portion between the first metal plug andthe second metal plug and a second portion between the third metal plugand the fourth metal plug, and a height of the second portion is greaterthan a height of the first portion.

In yet another embodiment of the present disclosure, a method forforming a semiconductor device is provided. The method includes forminga first metal plug, a second metal plug, a third metal plug, and afourth metal plug over a semiconductor substrate, wherein the firstmetal plug and the second metal plug are over a pattern-dense region ofthe semiconductor substrate, and the third metal plug and the fourthmetal plug are over a pattern-loose region of the semiconductorsubstrate. The method also includes depositing a dielectric layer overthe first metal plug, the second metal plug, the third metal plug, andthe fourth metal plug. A first portion of the dielectric layer extendsbetween the first metal plug and the second metal plug such that thefirst portion of the dielectric layer and the semiconductor substrateare separated by an air gap while a second portion of the dielectriclayer extends between the third metal plug and the fourth metal plugsuch that the second portion of the dielectric layer is in directcontact with the semiconductor substrate.

The embodiments of the present disclosure have some advantageousfeatures. By forming an air gap between the adjacent metal plugs in thepattern-dense region, the parasitic capacitance between the metal plugsin the pattern-dense region may be reduced. This significantly improvesthe overall device performance.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. For example,many of the processes discussed above can be implemented in differentmethodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present disclosure. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, and steps.

What is claimed is:
 1. A semiconductor device, comprising: a firstconductive feature and a second conductive feature disposed over apattern-dense region of a semiconductor substrate; a third conductivefeature (125 b) and a fourth conductive feature disposed over apattern-loose region of the semiconductor substrate; and a boron nitridelayer disposed over the pattern-dense region and the pattern-looseregion of the semiconductor substrate, wherein a first portion of theboron nitride layer between the first conductive feature and the secondconductive feature is separated from the semiconductor substrate by anair gap, and a second portion of the boron nitride layer between thethird conductive feature and the fourth conductive feature is in directcontact with the semiconductor substrate.
 2. The semiconductor device ofclaim 1, wherein the first conductive feature is separated from thesecond conductive feature by a first distance, the third conductivefeature is separated from the fourth conductive feature by a seconddistance, and the second distance is greater than the first distance. 3.The semiconductor device of claim 1, wherein the first conductivefeature, the second conductive feature, the third conductive feature,and the fourth conductive feature are covered by the boron nitridelayer, and a top surface of the first conductive feature is higher thana bottom surface of the first portion of the boron nitride layer.
 4. Thesemiconductor device of claim 1, further comprising: a first spacer on asidewall of the first conductive feature; and a second spacer on asidewall of the second conductive feature, wherein the air gap isenclosed by the first spacer, the second spacer, the first portion ofthe boron nitride layer, and the semiconductor substrate.
 5. Thesemiconductor device of claim 1, further comprising: a third spacer on asidewall of the third conductive feature, wherein the third spacer isenclosed by the third conductive feature, the boron nitride layer, andthe semiconductor substrate; and a fourth spacer on a sidewall of thefourth conductive feature, wherein the fourth spacer is enclosed by thefourth conductive feature, the boron nitride layer, and thesemiconductor substrate.
 6. The semiconductor device of claim 1, furthercomprising: an energy removable structure disposed between the firstconductive feature and the second conductive feature, wherein a portionof the energy removable structure is between the air gap and thesemiconductor substrate.
 7. The semiconductor device of claim 1, whereinthe pattern-dense region is in a memory cell of a memory device, and thepattern-loose region is in a peripheral region outside of the memorycell of the memory device.
 8. A semiconductor device, comprising: afirst conductive feature and a second conductive feature (disposed overa pattern-dense region of a semiconductor substrate; a third conductivefeature and a fourth conductive feature disposed over a pattern-looseregion of the semiconductor substrate, wherein a distance between thefirst conductive feature and the second conductive feature is less thana distance between the third conductive feature and the fourthconductive feature; and a boron nitride layer covering the firstconductive feature, the second conductive feature, the third conductivefeature, and the fourth conductive feature, wherein the boron nitridelayer has a first portion between the first conductive feature and thesecond conductive feature and a second portion between the thirdconductive feature and the fourth conductive feature, and a height ofthe second portion is greater than a height of the first portion.
 9. Thesemiconductor device of claim 8, wherein the height of the secondportion is substantially the same as a height of the third conductivefeature, and the first portion is separated from the semiconductorsubstrate by an air gap between the first conductive feature and thesecond conductive feature.
 10. The semiconductor device of claim 8,wherein a width of the second portion of the boron nitride layer isgreater than a width of the first portion of the boron nitride layer.11. The semiconductor device of claim 8, further comprising: a firstspacer on a sidewall of the first conductive feature; a second spacer ona sidewall of the second conductive feature; a third spacer on asidewall of the third conductive feature; and a fourth spacer on asidewall of the fourth conductive feature, wherein the air gap isbetween the first spacer and the second spacer.
 12. The semiconductordevice of claim 11, wherein a contact area between the second portion ofthe boron nitride layer and the third spacer is greater than a contactarea between the first portion of the boron nitride layer and the firstspacer.
 13. The semiconductor device of claim 11, further comprising: anenergy removable structure disposed between the first spacer and thesecond spacer and covered by the first portion of the boron nitridelayer, wherein the energy removable structure encloses an air gapbetween the first conductive feature and the second conductive feature.14. A method for forming a semiconductor device, comprising: forming afirst conductive feature, a second conductive feature, a thirdconductive feature, and a fourth conductive feature over a semiconductorsubstrate, wherein the first conductive feature and the secondconductive feature are formed over a pattern-dense region of thesemiconductor substrate, and the third conductive feature and the fourthconductive feature are formed over a pattern-loose region of thesemiconductor substrate; and depositing a boron nitride layer over thefirst conductive feature, the second conductive feature, the thirdconductive feature, and the fourth conductive feature, wherein a firstportion of the boron nitride layer extends between the first conductivefeature and the second conductive feature such that the first portion ofthe boron nitride layer and the semiconductor substrate are separated byan air gap while a second portion of the boron nitride layer extendsbetween the third conductive feature and the fourth conductive featuresuch that the second portion of the boron nitride layer is in directcontact with the semiconductor substrate.
 15. The method for forming asemiconductor device of claim 14, wherein a bottommost width of thesecond portion of the boron nitride layer is greater than a bottommostwidth of the first portion of the boron nitride layer.
 16. The methodfor forming a semiconductor device of claim 14, further comprising:forming a first spacer on a sidewall of the first conductive feature, asecond spacer on a sidewall of the second conductive feature, a thirdspacer on a sidewall of the third conductive feature, and a fourthspacer on a sidewall of the fourth conductive feature before the boronnitride layer is deposited.
 17. The method for forming a semiconductordevice of claim 16, further comprising: before the boron nitride layeris deposited, performing a deposition process to selectively form anenergy removable layer between the first spacer and the second spacer inthe pattern-dense region without depositing the energy removable layerbetween the third spacer and the fourth spacer in the pattern-looseregion.
 18. The method for forming a semiconductor device of claim 17,wherein the boron nitride layer is formed to cover the energy removablelayer, and the method further comprises: performing a heat treatmentprocess to remove the energy removable layer, such that the air gap isenclosed by the first spacer, the second spacer, the first portion ofthe boron nitride layer, and the semiconductor substrate.
 19. The methodfor forming a semiconductor device of claim 17, wherein the boronnitride layer is formed to cover the energy removable layer, and themethod further comprises: performing a heat treatment process totransform the energy removable layer into an energy removable structure,wherein the air gap is enclosed by the energy removable structure, andthe energy removable structure is denser than the energy removablelayer.
 20. The method for forming a semiconductor device of claim 14,wherein the formation of the first conductive feature, the secondconductive feature, the third conductive feature, and the fourthconductive feature comprises: forming a doped oxide layer over thesemiconductor substrate; etching the doped oxide layer to form aplurality of openings exposing the semiconductor substrate; forming thefirst conductive feature, the second conductive feature, the thirdconductive feature, and the fourth conductive feature in the openings;and removing the doped oxide layer before the boron nitride layer isdeposited.